IP Library Granted Patent US 6,744,099
Granted Patent Utility
US 6,744,099 · App. 10/372,329

MIS semiconductor device and manufacturing method thereof

Inventors: Ryuta Tsuchiya, Masatada Horiuchi
Patented Case View Patent ↗
Granted: Jun 1, 2004 Filed: Feb 25, 2003
Inventors
Ryuta Tsuchiya
Masatada Horiuchi
Assignee (at issue)
HITACHI, LTD.

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Quick Facts
Patent No.
US 6,744,099
App. No.
10/372,329
Filed
2003-02-25
Granted
2004-06-01
Kind
B2