IP Library › Granted Patent US 6,744,113
Granted Patent Utility
US 6,744,113 · App. 10/377,829

Semiconductor device with element isolation using impurity-doped insulator and oxynitride film

Inventors: Takashi Kuroi, Tomohiro Yamashita, Katsuyuki Horita
Patented Case View Patent ↗
Granted: Jun 1, 2004 Filed: Mar 4, 2003
Inventors
Takashi Kuroi
Tomohiro Yamashita
Katsuyuki Horita
Assignee (at issue)
Renesas Technology Corporation

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Quick Facts
Patent No.
US 6,744,113
App. No.
10/377,829
Filed
2003-03-04
Granted
2004-06-01
Kind
B2