IP Library Granted Patent US 6,746,971
Granted Patent Utility
US 6,746,971 · App. 10/314,060

Method of forming copper sulfide for memory cell

Inventors: Minh Van Ngo, Sergey Lopatin, Suzette K. Pangrle, Nicholas H. Tripsas, Hieu Pham
Patented Case View Patent ↗
Granted: Jun 8, 2004 Filed: Dec 5, 2002
Inventors
Minh Van Ngo
Sergey Lopatin
Suzette K. Pangrle
Nicholas H. Tripsas
Hieu Pham
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,746,971
App. No.
10/314,060
Filed
2002-12-05
Granted
2004-06-08
Kind
B1