IP Library Granted Patent US 6,747,321
Granted Patent Utility
US 6,747,321 · App. 10/024,122

Semiconductor memory device with a silicide layer formed on regions other than source regions

Inventor: Kohji Kanamori
Patented Case View Patent ↗
Granted: Jun 8, 2004 Filed: Dec 17, 2001
Inventor
Kohji Kanamori
Assignee (at issue)
NEC Electronics Corporation

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Quick Facts
Patent No.
US 6,747,321
App. No.
10/024,122
Filed
2001-12-17
Granted
2004-06-08
Kind
B2