Granted Patent
Utility
US 6,747,332 · App. 10/114,784
Semiconductor component having high voltage MOSFET and method of manufacture
Inventors:
Edouard D. de Frésart, Patrice M. Parris, Pak Tam
Patented Case
View Patent ↗
Granted: Jun 8, 2004
Filed: Apr 1, 2002
Inventors
Edouard D. de Frésart
Patrice M. Parris
Pak Tam
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.