Granted Patent
Utility
US 6,750,482 · App. 10/135,225
Highly conductive semiconductor layer having two or more impurities
Inventors:
Matthew L. Seaford, Arthur E. Geiss, Wayne Lewis, Larry W. Kapitan, Thomas James Rogers
Patented Case
View Patent ↗
Granted: Jun 15, 2004
Filed: Apr 30, 2002
Inventors
Matthew L. Seaford
Arthur E. Geiss
Wayne Lewis
Larry W. Kapitan
Thomas James Rogers
Assignee (at issue)
RF Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.