Granted Patent
Utility
US 6,764,889 · App. 10/621,668
Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes
Inventor:
Bantval J. Baliga
Patented Case
View Patent ↗
Granted: Jul 20, 2004
Filed: Jul 17, 2003
Inventor
Bantval J. Baliga
Assignee (at issue)
Silicon Semiconductor Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.