Granted Patent
Utility
US 6,764,906 · App. 10/317,568
Method for making trench mosfet having implanted drain-drift region
Inventor:
Mohamed N. Darwish
Patented Case
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Granted: Jul 20, 2004
Filed: Dec 12, 2002
Inventor
Mohamed N. Darwish
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.