IP Library › Granted Patent US 6,764,908
Granted Patent Utility
US 6,764,908 · App. 10/173,770

Narrow width CMOS devices fabricated on strained lattice semiconductor substrates with maximized NMOS and PMOS drive currents

Inventors: Daniel Kadosh, Derick J. Wristers, Qi Xiang, Bin Yu
Patented Case View Patent ↗
Granted: Jul 20, 2004 Filed: Jun 19, 2002
Inventors
Daniel Kadosh
Derick J. Wristers
Qi Xiang
Bin Yu
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,764,908
App. No.
10/173,770
Filed
2002-06-19
Granted
2004-07-20
Kind
B1