IP Library Granted Patent US 6,764,918
Granted Patent Utility
US 6,764,918 · App. 10/307,590

Structure and method of making a high performance semiconductor device having a narrow doping profile

Inventor: Gary H. Loechelt
Patented Case View Patent ↗
Granted: Jul 20, 2004 Filed: Dec 2, 2002
Inventor
Gary H. Loechelt
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

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Quick Facts
Patent No.
US 6,764,918
App. No.
10/307,590
Filed
2002-12-02
Granted
2004-07-20
Kind
B2