IP Library Granted Patent US 6,764,920
Granted Patent Utility
US 6,764,920 · App. 10/126,840

Method for reducing shallow trench isolation edge thinning on tunnel oxides using partial nitride strip and small bird's beak formation for high performance flash memory devices

Inventors: Nian Yang, John Jianshi Wang, Unsoon Kim
Patented Case View Patent ↗
Granted: Jul 20, 2004 Filed: Apr 19, 2002
Inventors
Nian Yang
John Jianshi Wang
Unsoon Kim
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,764,920
App. No.
10/126,840
Filed
2002-04-19
Granted
2004-07-20
Kind
B1