Granted Patent
Utility
US 6,765,242 · App. 09/547,152
Npn double heterostructure bipolar transistor with ingaasn base region
Inventors:
Ping-Chih Chang, Albert G. Baca, Nein-Yi Li, Hong Q. Hou, Carol I. H. Ashby
Patented Case
View Patent ↗
Granted: Jul 20, 2004
Filed: Apr 11, 2000
Inventors
Ping-Chih Chang
Albert G. Baca
Nein-Yi Li
Hong Q. Hou
Carol I. H. Ashby
Assignees (at issue)
Sandia Corporation
EMCORE CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.