IP Library › Granted Patent US 6,767,783
Granted Patent Utility
US 6,767,783 · App. 10/193,108

Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation

Inventors: Jeffrey Casady, Geoffrey Ewald Carter, Yaroslav Koshka, Michael S. Mazzola, Igor Sankin
Patented Case View Patent ↗
Granted: Jul 27, 2004 Filed: Jul 12, 2002
Inventors
Jeffrey Casady
Geoffrey Ewald Carter
Yaroslav Koshka
Michael S. Mazzola
Igor Sankin
Assignee (at issue)
Mississippi State University Research and Technology Corporation

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Quick Facts
Patent No.
US 6,767,783
App. No.
10/193,108
Filed
2002-07-12
Granted
2004-07-27
Kind
B2