IP Library Granted Patent US 6,767,791
Granted Patent Utility
US 6,767,791 · App. 10/364,569

Structure and method for suppressing oxide encroachment in a floating gate memory cell

Inventors: Yider Wu, Harpreet Sachar, Jean Y. Yang
Patented Case View Patent ↗
Granted: Jul 27, 2004 Filed: Feb 10, 2003
Inventors
Yider Wu
Harpreet Sachar
Jean Y. Yang
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,767,791
App. No.
10/364,569
Filed
2003-02-10
Granted
2004-07-27
Kind
B1