IP Library Granted Patent US 6,770,528
Granted Patent Utility
US 6,770,528 · App. 10/367,737

Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate

Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
Patented Case View Patent ↗
Granted: Aug 3, 2004 Filed: Feb 19, 2003
Inventors
Ryouichi Furukawa
Kazuyuki Suko
Masayuki Hiranuma
Koichi Saitoh
Hirohiko Yamamoto
Tadanori Yoshida
Masayuki Ishizaka
Maki Shimoda
Assignees (at issue)
Hitachi Ulsi Systems Co., Ltd.
Renesas Technology Corporation

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Quick Facts
Patent No.
US 6,770,528
App. No.
10/367,737
Filed
2003-02-19
Granted
2004-08-03
Kind
B2