IP Library Granted Patent US 6,770,539
Granted Patent Utility
US 6,770,539 · App. 10/421,829

Vertical type MOSFET and manufacturing method thereof

Inventor: Wataru Sumida
Patented Case View Patent ↗
Granted: Aug 3, 2004 Filed: Apr 24, 2003
Inventor
Wataru Sumida
Assignee (at issue)
NEC Electronics Corporation

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Quick Facts
Patent No.
US 6,770,539
App. No.
10/421,829
Filed
2003-04-24
Granted
2004-08-03
Kind
B2