Granted Patent
Utility
US 6,773,977 · App. 09/715,748
Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diode
Inventors:
Jean-Michel Reynes, Ivana Deram, Evgueniy Stefanov
Patented Case
View Patent ↗
Granted: Aug 10, 2004
Filed: Nov 17, 2000
Inventors
Jean-Michel Reynes
Ivana Deram
Evgueniy Stefanov
Assignees (at issue)
Freeescale Semiconductor, Inc.
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.