Granted Patent
Utility
US 6,773,997 · App. 09/917,731
Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability
Inventors:
Mohamed Imam, Joe Fulton, Zia Hossain, Masami Tanaka, Taku Yamamoto, Yoshio Enosawa, Katsuya Yamazaki, Evgueniy Stefanov
Patented Case
View Patent ↗
Granted: Aug 10, 2004
Filed: Jul 31, 2001
Inventors
Mohamed Imam
Joe Fulton
Zia Hossain
Masami Tanaka
Taku Yamamoto
Yoshio Enosawa
Katsuya Yamazaki
Evgueniy Stefanov
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.