IP Library Granted Patent US 6,774,449
Granted Patent Utility
US 6,774,449 · App. 09/664,555

Semiconductor device and method for fabricating the same

Inventors: Katsunori Nishii, Yoshito Ikeda, Hiroyuki Masato, Kaoru Inoue
Patented Case View Patent ↗
Granted: Aug 10, 2004 Filed: Sep 18, 2000
Inventors
Katsunori Nishii
Yoshito Ikeda
Hiroyuki Masato
Kaoru Inoue
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,774,449
App. No.
09/664,555
Filed
2000-09-18
Granted
2004-08-10
Kind
B1