IP Library Granted Patent US 6,777,253
Granted Patent Utility
US 6,777,253 · App. 10/017,389

Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device

Inventors: Akihiko Ishibashi, Ayumu Tsujimura, Yasutoshi Kawaguchi, Nobuyuki Otsuka, Kiyoshi Ohnaka
Patented Case View Patent ↗
Granted: Aug 17, 2004 Filed: Dec 18, 2001
Inventors
Akihiko Ishibashi
Ayumu Tsujimura
Yasutoshi Kawaguchi
Nobuyuki Otsuka
Kiyoshi Ohnaka
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,777,253
App. No.
10/017,389
Filed
2001-12-18
Granted
2004-08-17
Kind
B2