Granted Patent
Utility
US 6,777,287 · App. 10/445,124
Ferroelectric semiconductor memory device and a fabrication process thereof
Inventors:
Soichiro Ozawa, Shan Sun, Hideyuki Noshiro, George Hickert, Katsuyoshi Matsuura, Fan Chu, Takeyasu Saito
Patented Case
View Patent ↗
Granted: Aug 17, 2004
Filed: May 23, 2003
Inventors
Soichiro Ozawa
Shan Sun
Hideyuki Noshiro
George Hickert
Katsuyoshi Matsuura
Fan Chu
Takeyasu Saito
Assignee (at issue)
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.