Granted Patent
Utility
US 6,777,773 · App. 10/186,359
Memory cell with antifuse layer formed at diode junction
Inventor:
N. Johan Knall
Patented Case
View Patent ↗
Granted: Aug 17, 2004
Filed: Jun 27, 2002
Inventor
N. Johan Knall
Assignee (at issue)
MATRIX SEMICONDUCTOR, INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.