IP Library Granted Patent US 6,784,075
Granted Patent Utility
US 6,784,075 · App. 10/237,608

Method of forming shallow trench isolation with silicon oxynitride barrier film

Inventors: Tzu-Kun Ku, Chian-Kai Huang
Patented Case View Patent ↗
Granted: Aug 31, 2004 Filed: Sep 10, 2002
Inventors
Tzu-Kun Ku
Chian-Kai Huang
Assignee (at issue)
Silicon Integrated Systems Corp.

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Quick Facts
Patent No.
US 6,784,075
App. No.
10/237,608
Filed
2002-09-10
Granted
2004-08-31
Kind
B2