Granted Patent
Utility
US 6,784,508 · App. 09/803,265
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
Inventors:
Yoshitaka Tsunashima, Seiji Inumiya, Yasumasa Suizu, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka
Patented Case
View Patent ↗
Granted: Aug 31, 2004
Filed: Mar 9, 2001
Inventors
Yoshitaka Tsunashima
Seiji Inumiya
Yasumasa Suizu
Yoshio Ozawa
Kiyotaka Miyano
Masayuki Tanaka
Assignee (at issue)
Kabushiki Kaisha Toshiba
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.