Granted Patent
Utility
US 6,787,421 · App. 10/219,522
Method for forming a dual gate oxide device using a metal oxide and resulting device
Inventors:
David C. Gilmer, Christopher C. Hobbs, Hsing-Huang Tseng
Patented Case
View Patent ↗
Granted: Sep 7, 2004
Filed: Aug 15, 2002
Inventors
David C. Gilmer
Christopher C. Hobbs
Hsing-Huang Tseng
Assignee (at issue)
Freeescale Semiconductor, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.