IP Library Granted Patent US 6,790,719
Granted Patent Utility
US 6,790,719 · App. 10/410,043

Process for forming dual metal gate structures

Inventors: Olubunmi O. Adetutu, Eric D. Luckowski, Srikanth B. Samavedam, Arturo Martinez
Patented Case View Patent ↗
Granted: Sep 14, 2004 Filed: Apr 9, 2003
Inventors
Olubunmi O. Adetutu
Eric D. Luckowski
Srikanth B. Samavedam
Arturo Martinez
Assignee (at issue)
Freeescale Semiconductor, Inc.

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Quick Facts
Patent No.
US 6,790,719
App. No.
10/410,043
Filed
2003-04-09
Granted
2004-09-14
Kind
B1