IP Library › Granted Patent US 6,790,766
Granted Patent Utility
US 6,790,766 · App. 10/391,022

Method of fabricating semiconductor device having low dielectric constant insulator film

Inventors: Yoshikazu Yamaoka, Moritaka Nakamura
Patented Case View Patent ↗
Granted: Sep 14, 2004 Filed: Mar 19, 2003
Inventors
Yoshikazu Yamaoka
Moritaka Nakamura
Assignees (at issue)
SANYO ELECTRIC CO., LTD.
Fujitsu Limited

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Quick Facts
Patent No.
US 6,790,766
App. No.
10/391,022
Filed
2003-03-19
Granted
2004-09-14
Kind
B2