IP Library › Granted Patent US 6,791,891
Granted Patent Utility
US 6,791,891 · App. 10/406,406

Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage

Inventors: Jack Peng, Harry Luan, Jianguo Wang, Zhongshan Liu, David Fong, Fei Ye
Patented Case View Patent ↗
Granted: Sep 14, 2004 Filed: Apr 2, 2003
Inventors
Jack Peng
Harry Luan
Jianguo Wang
Zhongshan Liu
David Fong
Fei Ye
Assignee (at issue)
Kilopass Technologies, Inc.

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Quick Facts
Patent No.
US 6,791,891
App. No.
10/406,406
Filed
2003-04-02
Granted
2004-09-14
Kind
B1