Granted Patent
Utility
US 6,793,795 · App. 09/831,763
Method for galvanically forming conductor structures of high-purity copper in the production of integrated circuits
Inventors:
Heinrich Meyer, Andreas Thies
Patented Case
View Patent ↗
Granted: Sep 21, 2004
Filed: May 11, 2001
Inventors
Heinrich Meyer
Andreas Thies
Assignee (at issue)
Atotech Deutschland GmbH
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.