IP Library › Granted Patent US 6,794,233
Granted Patent Utility
US 6,794,233 · App. 10/627,418

Methods of fabricating a MOSFET

Inventors: Yongsoo CHO, Seung-Ho Hahn
Patented Case View Patent ↗
Granted: Sep 21, 2004 Filed: Jul 25, 2003
Inventors
Yongsoo CHO
Seung-Ho Hahn
Assignee (at issue)
Dongbu Electronics, Co. Ltd.

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Quick Facts
Patent No.
US 6,794,233
App. No.
10/627,418
Filed
2003-07-25
Granted
2004-09-21
Kind
B2