IP Library › Granted Patent US 6,794,698
Granted Patent Utility
US 6,794,698 · App. 09/549,265

Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls

Inventors: Dung-Ching Perng, Yauh-Ching Liu
Patented Case View Patent ↗
Granted: Sep 21, 2004 Filed: Apr 14, 2000
Inventors
Dung-Ching Perng
Yauh-Ching Liu
Assignee (at issue)
LSI Logic Corporation

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Quick Facts
Patent No.
US 6,794,698
App. No.
09/549,265
Filed
2000-04-14
Granted
2004-09-21
Kind
B1