IP Library Granted Patent US 6,794,705
Granted Patent Utility
US 6,794,705 · App. 09/751,551

Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials

Inventors: Jingyu Lian, Chenting Lin, Nicolas Nagel, Michael Wise
Patented Case View Patent ↗
Granted: Sep 21, 2004 Filed: Dec 28, 2000
Inventors
Jingyu Lian
Chenting Lin
Nicolas Nagel
Michael Wise
Assignee (at issue)
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,794,705
App. No.
09/751,551
Filed
2000-12-28
Granted
2004-09-21
Kind
B2