IP Library › Granted Patent US 6,797,416
Granted Patent Utility
US 6,797,416 · App. 10/391,564

GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits

Inventors: Mitsugu Wada, Toshiaki Kuniyasu, Toshiaki Fukunaga
Patented Case View Patent ↗
Granted: Sep 28, 2004 Filed: Mar 20, 2003
Inventors
Mitsugu Wada
Toshiaki Kuniyasu
Toshiaki Fukunaga
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 6,797,416
App. No.
10/391,564
Filed
2003-03-20
Granted
2004-09-28
Kind
B2