Granted Patent
Utility
US 6,797,549 · App. 10/272,688
High voltage MOS transistor with gate extension
Inventor:
Francois Hebert
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: Oct 15, 2002
Inventor
Francois Hebert
Assignee (at issue)
Linear Technology Holding LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.