Granted Patent
Utility
US 6,797,572 · App. 10/618,273
Method for forming a field effect transistor having a high-k gate dielectric and related structure
Inventors:
Joong S. Jeon, Huicai Zhong
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: Jul 11, 2003
Inventors
Joong S. Jeon
Huicai Zhong
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.