Granted Patent
Utility
US 6,797,590 · App. 10/427,974
DRAM cell structure capable of high integration and fabrication method thereof
Inventor:
Cheolsoo Park
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: May 2, 2003
Inventor
Cheolsoo Park
Assignee (at issue)
Dongbu Electronics, Co. Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.