IP Library Granted Patent US 6,797,638
Granted Patent Utility
US 6,797,638 · App. 10/159,262

Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen

Inventors: Norbert Falk, Günther Ruhl
Patented Case View Patent ↗
Granted: Sep 28, 2004 Filed: May 31, 2002
Inventors
Norbert Falk
Günther Ruhl
Assignees (at issue)
Infineon Technologies AG
Applied Materials, Inc.

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Quick Facts
Patent No.
US 6,797,638
App. No.
10/159,262
Filed
2002-05-31
Granted
2004-09-28
Kind
B2