Granted Patent
Utility
US 6,797,650 · App. 10/342,032
Flash memory devices with oxynitride dielectric as the charge storage media
Inventors:
Zhigang Wang, Nian Yang, John Jianshi Wang, Jiang Li
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: Jan 14, 2003
Inventors
Zhigang Wang
Nian Yang
John Jianshi Wang
Jiang Li
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.