Granted Patent
Utility
US 6,797,995 · App. 10/075,428
Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector
Inventors:
Richard L. Pierson, Jr., James Chingwei Li, Berinder Brar, John A. Higgins
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: Feb 14, 2002
Inventors
Richard L. Pierson, Jr.
James Chingwei Li
Berinder Brar
John A. Higgins
Assignee (at issue)
Rockwell Scientific Licensing LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.