Granted Patent
Utility
US 6,798,017 · App. 09/944,665
Vertical dual gate field effect transistor
Inventors:
Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, James M. Leas, William H. Ma, Paul A. Rabidoux
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: Aug 31, 2001
Inventors
Toshiharu Furukawa
Mark C. Hakey
Steven J. Holmes
David V. Horak
James M. Leas
William H. Ma
Paul A. Rabidoux
Assignee (at issue)
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.