Granted Patent
Utility
US 6,800,520 · App. 10/234,576
Localized array threshold voltage implant enhance charge storage within DRAM memory cells
Inventors:
Rongsheng Yang, Howard E. Rhodes
Patented Case
View Patent ↗
Granted: Oct 5, 2004
Filed: Aug 30, 2002
Inventors
Rongsheng Yang
Howard E. Rhodes
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.