IP Library › Granted Patent US 6,803,248
Granted Patent Utility
US 6,803,248 · App. 10/029,093

Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers

Inventors: Mariam Sadaka, Jonathan K. Abrokwah
Patented Case View Patent ↗
Granted: Oct 12, 2004 Filed: Dec 21, 2001
Inventors
Mariam Sadaka
Jonathan K. Abrokwah
Assignee (at issue)
Freeescale Semiconductor, Inc.

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Quick Facts
Patent No.
US 6,803,248
App. No.
10/029,093
Filed
2001-12-21
Granted
2004-10-12
Kind
B2