Granted Patent
Utility
US 6,803,272 · App. 10/646,080
Use of high-K dielectric material in modified ONO structure for semiconductor devices
Inventors:
Arvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Nicholas H. Tripsas, Robert B. Ogle
Patented Case
View Patent ↗
Granted: Oct 12, 2004
Filed: Aug 22, 2003
Inventors
Arvind Halliyal
Mark T. Ramsbey
Kuo-Tung Chang
Nicholas H. Tripsas
Robert B. Ogle
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.