IP Library › Granted Patent US 6,803,277
Granted Patent Utility
US 6,803,277 · App. 10/744,495

Method of forming gate electrode in flash memory device

Inventors: Cha Deok Dong, II Keoun Han
Patented Case View Patent ↗
Granted: Oct 12, 2004 Filed: Dec 23, 2003
Inventors
Cha Deok Dong
II Keoun Han
Assignee (at issue)
SK hynix Inc.

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Quick Facts
Patent No.
US 6,803,277
App. No.
10/744,495
Filed
2003-12-23
Granted
2004-10-12
Kind
B1