IP Library › Granted Patent US 6,803,308
Granted Patent Utility
US 6,803,308 · App. 10/704,966

Method of forming a dual damascene pattern in a semiconductor device

Inventor: Sang Woo Nam
Patented Case View Patent ↗
Granted: Oct 12, 2004 Filed: Nov 12, 2003
Inventor
Sang Woo Nam
Assignee (at issue)
Dongbu Electronics, Co. Ltd.

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Quick Facts
Patent No.
US 6,803,308
App. No.
10/704,966
Filed
2003-11-12
Granted
2004-10-12
Kind
B2