Granted Patent
Utility
US 6,806,154 · App. 09/169,303
Method for forming a salicided MOSFET structure with tunable oxynitride spacer
Inventor:
Guo-Qiang Lo
Patented Case
View Patent ↗
Granted: Oct 19, 2004
Filed: Oct 8, 1998
Inventor
Guo-Qiang Lo
Assignee (at issue)
Integrated Device Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.