IP Library Granted Patent US 6,806,513
Granted Patent Utility
US 6,806,513 · App. 10/267,342

Heterojunction bipolar transistor having wide bandgap material in collector

Inventors: Hin Fai Chau, Clarence J. Dunnrowicz, Yan-Hao Chen, Chien-Ping Lee
Patented Case View Patent ↗
Granted: Oct 19, 2004 Filed: Oct 8, 2002
Inventors
Hin Fai Chau
Clarence J. Dunnrowicz
Yan-Hao Chen
Chien-Ping Lee
Assignee (at issue)
EIC Corporation

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Quick Facts
Patent No.
US 6,806,513
App. No.
10/267,342
Filed
2002-10-08
Granted
2004-10-19
Kind
B2