IP Library Granted Patent US 6,809,039
Granted Patent Utility
US 6,809,039 · App. 09/940,247

Method for forming a silicide layer

Inventor: Takamasa Ito
Patented Case View Patent ↗
Granted: Oct 26, 2004 Filed: Aug 27, 2001
Inventor
Takamasa Ito
Assignee (at issue)
NEC Electronics Corporation

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Quick Facts
Patent No.
US 6,809,039
App. No.
09/940,247
Filed
2001-08-27
Granted
2004-10-26
Kind
B2