Granted Patent
Utility
US 6,815,270 · App. 10/438,725
Thin film transistor formed by an etching process with high anisotropy
Inventors:
Takatoshi Tsujimura, Masatomo Takeichi, Kai Schleupen, Evan G. Colgan
Patented Case
View Patent ↗
Granted: Nov 9, 2004
Filed: May 15, 2003
Inventors
Takatoshi Tsujimura
Masatomo Takeichi
Kai Schleupen
Evan G. Colgan
Assignee (at issue)
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.