Granted Patent
Utility
US 6,818,462 · App. 10/224,028
METHOD OF DETERMINING THE ACTIVE REGION WIDTH BETWEEN SHALLOW TRENCH ISOLATION STRUCTURES USING A C-V MEASUREMENT TECHNIQUE FOR FABRICATING A FLASH MEMORY SEMICONDUCTOR DEVICE AND A DEVICE THEREBY FORMED
Inventors:
Tien-Chun Yang, Nian Yang, Zhigang Wang
Patented Case
View Patent ↗
Granted: Nov 16, 2004
Filed: Aug 19, 2002
Inventors
Tien-Chun Yang
Nian Yang
Zhigang Wang
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.